
Document Number: 93169 For technical questions, contact: ind-modules@vishay.com
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Revision: 14-May-08 7
SD1553C..K Series
Fast Recovery Diodes
(Hockey PUK Version),
1650/1825 A
Vishay High Power Products
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maxim um Reverse Recovery Tim e - Trr (µs)
500 A
I = 1500 A
Sine Pulse
1000 A
FM
SD1 553C ..S20K Series
T = 150 °C ; V > 100V
rJ
0
200
400
600
800
1000
1200
1400
050100150200250300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
I = 15 00 A
Sine Puls e
1000 A
FM
SD 1553C..S20K Serie s
T = 150 °C ; V > 100V
J r
0
100
200
300
400
500
600
700
0 50 100 150 200 250 300
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1500 A
Sine Pulse
1000 A
500 A
FM
SD155 3C ..S20K Serie s
T = 150 °C; V > 100V
J
r
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maxim um Reverse Recovery Tim e - Trr (µs)
500 A
I = 150 0 A
Sine Pulse
1000 A
FM
SD 1553C ..S30K Series
T = 150 °C ; V > 100V
rJ
0
200
400
600
800
1000
1200
1400
1600
050100150200250300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
I = 150 0 A
Sine Pu lse
1000 A
FM
SD 1553C ..S3 0K Series
T = 1 5 0 ° C ; V > 1 0 0 V
J r
0
100
200
300
400
500
600
700
0 50 100 150 2 00 250 300
M axim um Reve rse Re c ove ry C urre nt - Irr (A)
500 A
Ra te O f Fa ll Of Fo rwa r d C urren t - di/d t (A/µs )
I = 1 50 0 A
Sine Puls e
1000 A
FM
SD 1553C ..S30K Se ries
T = 150 °C; V > 100V
J
r
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